2N3906 Spec Sheet

2N3906 Spec Sheet - 200 ma) low voltage (max. Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:

Silicon epitaxial planar npn transistor. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. 200 ma) low voltage (max.

Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. Microdot may be in either location). 200 ma) low voltage (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Silicon epitaxial planar npn transistor.

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Silicon Epitaxial Planar Npn Transistor.

Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.

Web Product Specification Transistor 2N3906 Features Pinning Low Current (Max.

200 ma) low voltage (max.

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